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Diamond Deposition on Graphite in Hydrogen Microwave Plasma
ISSN: 2369 - 3355
Publisher: author
Diamond Deposition on Graphite in Hydrogen Microwave Plasma
Indexed in
Technology and Engineering
ARTICLE-FACTOR
1.3
Article Basics Score: 2
Article Transparency Score: 2
Article Operation Score: 3
Article Articles Score: 3
Article Accessibility Score: 3
SUBMIT PAPER ASK QUESTION
International Category Code (ICC):
ICC-1802
Publisher: Lifescience Global Inc.
International Journal Address (IAA):
IAA.ZONE/2369108163355
eISSN
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2369 - 3355
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ISSN Validator
Abstract
Hydrogen plasma etching of graphite generates radicals that can be used for diamond synthesis by chemical vapor deposition (CVD). We studied the etching of polycrystalline graphite by a hydrogen microwave plasma, growth of diamond particles of the non-seeded graphite substrates, and characterized the diamond morphology, grain size distribution, growth rate, and phase purity. The graphite substrates served simultaneously as a carbon source, this being the specific feature of the process. A disorder of the graphite surface structure reduces as the result of the etching as revealed with Raman spectroscopy. The diamond growth rate of 3 – 5 µm/h was achieved, the quality of the produced diamond grains improving with growth time due to inherently nonstationary graphite etching process.
